jiejie microelectronics co. , ltd tel +86 - 513 - 83639777 - 1 / 5 - http://www.jjwdz.com acjt 1 2 series 1 2 a triac s rev . 3 .0 description: the acjt1 2 series of double mesa technology provide high interference immunity , they can be used as an static on/off function in e lectrical control system , and used as a driver of low power and high inductance or resistive load s, such as jet pumps of dishwashers, fans of air - conditioner ... acjt1 2 xx - xxa provides insulation voltage rated at 2 5 00v rms and acjt1 2 xx - xxf provides insulation voltage rated at 2 000v rms from all three terminals to external he a tsink . main features symbol value unit i t( rms ) 1 2 a v drm /v rrm 1000 v i gt 10 or 35 or 50 ma absolute maximum ratings parameter symbol value unit storage junction temperature range t stg - 40 - 1 50 operating junction temperature range t j - 40 - 125 repetitive peak off - state voltage ( t j =25 ) v drm 100 0 v repetitive peak reverse voltage ( t j =25 ) v rrm 100 0 v non repetitive surge peak off - state voltage v dsm v drm +1 00 v non repetitive peak reverse voltage v rsm v r rm +1 00 v rms on - state current to - 220a ( ins ) / to - 220f ( ins ) (t c = 92 ) i t( rms ) 1 2 a to - 220b ( non - ins ) (t c = 103 ) non repetitive surge peak on - state current (full cycle, f=50hz) i tsm 1 2 0 a i 2 t value for fusing ( tp= 10 m s ) i 2 t 72 a 2 s rate of rise of on - state current ( i g = 2 i gt ) di t /dt 50 a/ s t1(1) g(3) t2(2) to-220a insulated to-220f insulated to-220b non-insulated 1 1 1 2 2 2 3 3 3
acjt 1 2 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 2 / 5 - http://www.jjwdz.com peak gate current i gm 4 a average gate power dissipation p g(av) 1 w peak gate power p gm 5 w electrical characteristics (t j =25 unless otherwise specified ) symbol test condition quadrant value unit acjt1 2 10 acjt1 2 35 acjt1 2 50 i gt v d =12v r l =33 - - max 10 35 50 ma v gt - - max 1.5 v v gd v d =v drm t j =125 r l = 3.3 k - - min 0.2 v i l i g = 1.2 i g t - max 20 50 70 ma 30 70 100 i h i t = 100m a max 15 45 60 ma dv/dt v d =2/3v drm gate ope n t j = 125 min 1000 1500 2000 v / s static characteristics symbol parameter value(max) unit v tm i t m = 17 a tp= 380 s t j =25 1.65 v i drm v d =v d rm v r =v r rm t j =25 10 a i rrm t j =1 25 3.0 ma thermal resistances symbol parameter value unit r th(j - c) junction to case(ac) to - 220a ( ins ) / to - 220f ( ins ) 4.0 /w to - 220b ( non - ins ) 2.8
acjt 1 2 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 3 / 5 - http://www.jjwdz.com ordering information package mechanical data a c j t 1 2 3 5 - 1 0 f a c s w i t c h i t ( r m s ) : 1 2 a 1 0 : i g t 1 - 3 1 0 m a 3 5 : i g t 1 - 3 3 5 m a 5 0 : i g t 1 - 3 5 0 m a a : t o - 2 2 0 a ( i n s ) f : t o - 2 2 0 f ( i n s ) b : t o - 2 2 0 b ( n o n - i n s ) j i e j i e m i c r o e l e c t r o n i c s c o . , l t d t r i a c s 1 0 : v d r m / v r r m 1 0 0 0 v a c2 f c3 c e l3 l1 g b l2 d h v1 max 3.8mm dimensions millimeters inches ref. min. typ. max. min. typ. max. a b c c2 c3 d e f g h l1 l2 l3 4.40 0.61 0.46 1.21 4.60 0.88 0.70 1.32 0.173 0.024 0.018 0.048 0.181 0.035 0.028 0.052 2.40 2.72 9.80 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.094 0.107 8.60 9.70 2.54 0.1 v1 0.339 0.382 10.4 0.386 0.409 6.55 6.95 0.258 0.274 2.65 2.95 0.104 0.116 45 45 3.75 0.148 to-220a ins
acjt 1 2 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 4 / 5 - http://www.jjwdz.com package mechanical data jie a c2 f c3 c e l3 l1 g b l2 d h v1 max 3.8mm dimensions millimeters inches ref. min. typ. max. min. typ. max. a b c c2 c3 d e f g h l1 l2 l3 4.40 0.61 0.46 1.21 4.60 0.88 0.70 1.32 0.173 0.024 0.018 0.048 0.181 0.035 0.028 0.052 2.40 2.72 9.60 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.094 0.107 8.60 9.70 2.54 0.1 v1 0.339 0.382 10.4 0.378 0.409 6.20 6.60 0.244 0.260 2.65 2.95 0.104 0.116 45 45 3.75 0.148 to-220b non-ins a d e h g b c c2 max 3.5mm c3 v1 l3 l2 f l1 dimensions millimeters inches ref. min. typ. max. min. typ. max. a b c c2 c3 d e f g h l1 l2 l3 4.40 0.74 0.48 2.40 4.80 0.83 0.75 2.70 0.173 0.029 0.019 0.094 0.189 0.033 0.030 0.106 2.60 3.00 9.70 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.102 0.118 8.80 9.30 2.54 0.1 v1 0.346 0.366 10.3 0.382 0.406 6.40 7.00 0.252 0.276 3.30 0.130 45 3.63 0.143 0.80 0.031 45 to-220f ins
acjt 1 2 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 5 / 5 - http://www.jjwdz.com information furnished in this document is believed to be accurate and reliable . however, jiangsu jiejie microelectronics co.,ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, jiangsu jiejie complies with the agreement. products and information provided in this document have no infringement of patents. jiangsu jiejie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. this document is the t hir d version which is made in 1 2 - j une - 2 01 5 . this document supersedes and replaces all information previously supplied. is a registered trademark of jiangsu jiejie microelectronics co.,ltd. copyright ? 201 5 jiangsu jiejie microelectronics co.,ltd. printed all rights reserved. fig.3: surge peak on-state current versus number of cycles fig.1 maximum power dissipation versus rms on-state current fig.4: on-state characteristics (maximum values) fig.2: rms on-state current versus case temperature i t(rms) (a) p(w) 0 3 6 9 12 15 0 3 i t(rms) (a) tc ( ) 0 3 6 9 0 25 50 75 100 125 1 10 100 1000 number of cycles 0 20 40 60 80 i tsm (a) i tm (a) v tm (v) 0 0.5 1.0 1.5 2.0 2.5 0 tj=125 12 100 120 150 9 12 15 18 10 20 30 40 tj=25 18 to-220a(ins)/ to-220f(ins) to-220b (non-ins) 6 15 =180 t=20ms one cycle fig.6: relative variations of holding current, latching curretn versus junction temperature -40 -20 0 20 40 60 80 100 120 140 i h ,i l (tj) /i h ,i l (tj=25 ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 tj ( ) fig.5: relative variations of gate trigger current versus junction temperature -40 -20 0 20 40 60 80 100 120 140 i gt (tj) /i gt (tj=25 ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i gt1 &i gt2 tj ( ) i h i l i gt3
|
